Company Performance Metrics
Ibis Technology Corporation (Ibis) develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. Separation by implantation of oxygen (SIMOX), is a form of silicon-on-insulator (SOI) technology that creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and
annealing. The Company's oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. The buried layer of silicon dioxide acts as an insulator for the devices fabricated on the surface of the silicon wafer and reduces the electrical current leakage, which otherwise slows integrated circuit performance, and/or increases the loss of power during circuit operation.
